bl galaxy electrical production specification small signal mosfet transistor 2N7002T document number: bl/ssmth016 www.galaxycn.com rev.a 1 features z low on-resistance. z low gate threshold voltge. z low input capacitance. z fast switching speed. z low input/output leakage. applications z n-channel enhancement m ode effect transistor. z switching application. sot-523 ordering information type no. marking package code 2N7002T 72 sot-523 maximum rating @ ta=25 unless otherwise specified symbol parameter value units v dss drain-source voltage 60 v v dgr drain-gate voltage(r gs 1m ? ) 60 v v gss gate -source voltage - continuous -non repetitive (t p <50 s) 20 40 v i d maximum drain current -continuous -pulsed 115 800 ma p d power dissipation 150 mw r ja thermal resistance,junction-to-ambient 833 / w t j , tstg junction and storage temperature -55-150 pb lead-free
bl galaxy electrical production specification small signal mosfet transistor 2N7002T document number: bl/ssmth016 www.galaxycn.com rev.a 2 electrical characteristics @ ta=25 unless otherwise specified parameter symbol test conditions min typ max unit drain-source breakdown voltage v (br)dss v gs =0v,i d =10 a 60 gate threshold voltage v gs(th) v ds =v gs , i d =-250 a 1 2.0 v gate-body leakage forward reverse i gss v ds =0v, v gs =20v v ds =0v, v gs =-20v 10 -10 na v ds =60v, v gs =0v 1 zero gate voltage drain current i dss v ds =60v,v gs =0v,t j =125 500 a on-state drain current i d(on) v gs =10v, v ds =7.5v 0.5 1.0 a drain-source on-voltage v ds(on) v gs =10v,i d =500ma v gs =5v,i d =50ma 0.6 0.09 3.75 1.5 v forward transconductance g fs v ds =10v,i d =200ma 80 ms static drain-source on-resistance r ds(on) v gs =10v,i d =500ma v gs =10v,i d =500ma,t j =100 v gs =5.0v,i d =50ma v gs =5.0v,i d =50ma, t j =100 1.2 1.7 1.7 2.4 7.5 13.5 7.5 13.5 ? drain-source diode forward voltage v sd v gs =0v,i d =115ma 0.88 1.5 v input capacitance c iss 22 50 output capacitance c oss 11 25 reverse transfer capacitance c rss v ds =25v,v gs =0v,f=1.0mhz 2 5 pf turn-on delay time t d(on) 7.0 20 ns turn-off delay time t d(off) v dd =30v, i d =0.2a, r l =150 ? , v gs =10v, r gen = 25 ? 11 20 ns
bl galaxy electrical production specification small signal mosfet transistor 2N7002T document number: bl/ssmth016 www.galaxycn.com rev.a 3 typical characteristics @ ta=25 unless otherwise specified
bl galaxy electrical production specification small signal mosfet transistor 2N7002T document number: bl/ssmth016 www.galaxycn.com rev.a 4 package outline plastic surface mounted package sot-523 soldering footprint unit : mm package information sot-523 dim min max a 1.5 1.7 b 0.75 0.85 c 0.6 0.8 d 0.15 0.3 g 0.9 1.1 h 0.02 0.1 j 0.1typical k 1.45 1.75 all dimensions in mm device package shipping 2N7002T sot-523 3000/tape&reel h j g k d c b a
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